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Typical Characteristics (Q1 N-Channel) T J = 25°C unless otherwise noted
60
3.0
50
40
30
V GS = 10V
V GS = 4.5V
V GS = 4.0V
PULSE DURATION = 80 P s
DUTY CYCLE = 0.5%MAX
V GS = 3.5V
2.5
2.0
1.5
V GS = 3.0V
V GS = 3.5V
PULSE DURATION = 80 P s
DUTY CYCLE = 0.5%MAX
V GS = 4.0V
V GS = 4.5V
20
10
0
V GS = 3.0V
1.0
0.5
V GS = 10V
0
1
2
3
4
0
10
20
30
40
50
60
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On- Region Characteristics
1.8
I D , DRAIN CURRENT(A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
50
I D = 9A
I D = 9A
PULSE DURATION = 80 P s
1.6
1.4
1.2
1.0
V GS = 10V
40
30
DUTY CYCLE = 0.5%MAX
T J = 125 o C
T J = 25 o C
20
0.8
0.6
-75
-50
-25
0
25
50
75
100 125 150
10
2
4
6
8
10
T J , JUNCTION TEMPERATURE ( C )
o
Figure 3. Normalized On -Resistance
vs Junction Temperature
60
PULSE DURATION = 80 P s
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
60
V GS = 0V
50
DUTY CYCLE = 0.5%MAX
10
40
V DS = 5V
1
T J = 150 o C
30
20
0.1
T J = 25 o C
10
T J = 150 o C
T J = 25 o C
0.01
T J = -55 o C
T J = -55 o C
0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0.001
0.0
0.3
0.6
0.9
1.2
1.5
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
?2013 Fairchild Semiconductor Corporation
FDD8424H Rev.C1
4
www.fairchildsemi.com
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